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Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads
Beitrag zu einer Konferenz
This paper presents packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads for frequency tuning at mm-wave frequencies. The developed technique provides easy optimization to maximize the RF performance ...
Terrorist fraud resistance of distance bounding protocols employing physical unclonable functions
Beitrag zu einer Konferenz
Distance bounding protocols (DBPs) aim to restrict the acceptable distance between the communication partners of a wireless communication. Despite numerous proposed protocols, recent analyses of DBPs have shown the majority ...
High temperature stability of nitride-based power HEMTs
Beitrag zu einer Konferenz
The temperature stability of InAlN/GaN
heterostructure FETs has been tested by a stepped temperature
test routine under large signal operation conditions. Devices have
been successfully operated up to 900 °C for 50 hrs. ...
Analog synchronous receiver for multi-gigabit wireless communications
Beitrag zu einer Konferenz
In this work, we present a synchronous receiver architecture utilizing analog carrier recovery, to be used in multi-gigabit wireless communication systems. Carrier phase and frequency synchronization in the analog receiver ...
Impulse generator targeting the European UWB mask
Beitrag zu einer Konferenz
This paper presents a monolithic impulse generator IC targeting the spectral mask for ultra-wideband applications allocated in the European Union. The multicycle impulse is based on a spike triggered resonant circuit and ...
A fully differential IR-UWB front-end for noncoherent communication and localization
Beitrag zu einer Konferenz
This paper presents a 3.1 - 10.6 GHz ultra-wideband
transmitter/receiver chipset for non-coherent communication
and localization applications. Its fully differential topology fits
promising balanced UWB antennas, and eases ...
A SiGe HBT low-power pulse generator for impulse radio ultra-wide band applications
Beitrag zu einer Konferenz
In this paper a compact ultra-wide band (UWB) pulse generator using SiGe HBT technology is presented. The proposed circuit uses a simple circuitry to generate a current spike on chip, which in turn triggers an under-damped ...
A highly compact SiGe HBT differential LNA for 3.1 - 10.6 GHz ultra-wideband applications
Beitrag zu einer Konferenz
A fully differential low noise amplifier (LNA) using SiGe HBT technology for ultra-wide band applications is presented. Measured results show the maximum power gain of 19.9 dB with a variation of 1.8 dB within the entire ...
U- and V-band signal sources in Si/SiGe technology
Beitrag zu einer Konferenz
A U-band VCO and a V-band push-push frequency doubler are designed in a 0.25 mym SiGe:C BiCMOS technology. The VCO oscillates from 48 GHz to 55 GHz, with an output power of around - 1 dBm and a phase noise of - 84 dBc/Hz ...
MEMS module integration into SiGe BiCMOS technology for embedded system applications
Beitrag zu einer Konferenz
The introduction of radio frequency micro-electro-mechanical systems (RFMEMS) as a monolithic option into state-of-the-art Si/SiGe BiCMOS foundry processes has paved the way for single chip radio frequency microsystems at ...